The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits

نویسندگان

  • B. Kaczer
  • P. Weckx
  • V. Putcha
  • M. Cho
  • R. Degraeve
  • D. Linten
  • B. Parvais
  • P. Raghavan
  • F. Catthoor
  • M. Waltl
  • T. Grasser
چکیده

http://dx.doi.org/10.1016/j.sse.2016.07.010 0038-1101/ 2016 Elsevier Ltd. All rights reserved. ⇑ Corresponding author. E-mail address: [email protected] (B. Kaczer). 1 Also at KU Leuven, ESAT Department, Leuven, Belgium. B. Kaczer a,⇑, J. Franco , P. Weckx , Ph.J. Roussel , M. Simicic , V. Putcha , E. Bury , M. Cho , R. Degraeve , D. Linten , G. Groeseneken , P. Debacker , B. Parvais , P. Raghavan , F. Catthoor , G. Rzepa , M. Waltl , W. Goes , T. Grasser b

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تاریخ انتشار 2016